发明名称 |
PROCEDE DE FABRICATION D'UNE COUCHE EPITAXIEE |
摘要 |
The fabrication of an epitaxial layer (6) consists of: (a) implanting some atomic species into a support substrate (1) to define a fragile zone delimiting a thin support layer (13) from the rest (11) of the substrate; (b) transferring a thin nucleation layer (23) onto this thin support layer; (c) detaching the rest of the substrate along the fragile zone but keeping the thin support layer in contact with the rest of the substrate; (d) growing by epitaxy the epitaxial layer on the nucleation layer; (e) separating the rest of the substrate from the thin support layer. |
申请公布号 |
FR2857983(B1) |
申请公布日期 |
2005.09.02 |
申请号 |
FR20030009079 |
申请日期 |
2003.07.24 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
LETERTRE FABRICE;FAURE BRUCE |
分类号 |
C30B25/18;C30B33/00;H01L21/762 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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