| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which is reduced in temperature rise due to the concentration of heat. <P>SOLUTION: The aspect ratio of a power semiconductor element is set to 1.5 or above. Due to this structure, heat dissipation to the surrounding area is increased, and thereby even a power semiconductor element having a high current density can be operated in an efficient temperature region. The number of wires 61-87 for drawing out a main current from a source electrode 2 should be 14 or above and be directed in two different directions. The ends of the wires directed in two different directions are connected to one and the same interconnection electrode 42. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
