LATERAL TRENCH FIELD-EFFECT TRANSISTORS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS, METHODS OF MAKING, AND INTEGRATED CIRCUITS INCORPORATING THE TRANSISTORS

摘要

A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits com rising the devices are also described.