SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A solid state image device is provided to prevent nitrogen impurities from being injected to a gate insulation layer that doesn't need to be nitridized, by including a nitridized gate insulation layer and a non-nitridized gate insulation layer. A plurality of pixel cells are arranged as a matrix type on a semiconductor substrate(100). A peripheral circuit outputs a signal from the pixel cell via a predetermined signal line. Both a nitridized gate insulation layer(105) and a non-nitridized gate insulation layer(103) are includes as a gate insulation layer of a plurality of transistors constituting a solid state image device including the plurality of pixel cells and the peripheral circuit. The plurality of transistors constituting the peripheral circuit can include both an N-channel transistor and a P-channel transistor. At least a part of the transistor constituting the pixel cell can be an N-channel transistor, and at least a part of the N-channel transistor has a non-nitridized gate insulation layer.