FORMING METHOD OF OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR TRANSISTER, AND FORMING METHOD OF THE SAME

摘要

PURPOSE: A method for forming an oxide semiconductor thin film, an oxide semiconductor transistor, and a method for forming the oxide semiconductor transistor are provided to simplify a manufacturing process and obtain thermal reliability by removing an ohmic junction layer between the oxide semiconductor and a source/drain electrode. CONSTITUTION: Tin monoxide powder is provided(S100). The tin monoxide powder is loaded on a heating vessel inside a vacuum container(S110). A substrate is mounted on a substrate holder(S120). Atmosphere gas is inputted to the vacuum container(S130). The tin monoxide powder is evaporated by heating the heat vessel(S140). The evaporated tin monoxide is deposited on the substrate(S150). The deposited tin monoxide is thermally treated(S160).