| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the specific property and reliability of a thin film transistor by minimizing the leak current through a metal included in the thin film transistor. <P>SOLUTION: The method of manufacturing a thin film transistor includes a step of forming a non-crystallin silicon film on an insulation substrate, a step of forming a sacrificial film having a protrusion and recess on the non-crystalline silicon film, a step of forming a poly-crystallin silicon film by crystallizing the non-crystalline silicon film by a heat treatment after a metal plate is contacted on the sacrificial film, a step of removing the metal plate and the sacrificial film, a step of forming an island shape member by patterning the poly-crystallin silicon film, a step of forming a gate insulation film covering the island shape member, a step of forming a gate line on the insulation film partially overlapping the island shape member, a step of forming a source/drain region by highly doping a conductive impurity in the predetermined region of the island shape member, a step of forming an inter layer insulation film covering the gate line and the island shape member, and a step of forming a data line and an output electrode on the inter layer insulation film conncted to the source/drain region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
