| 摘要 |
<p>PURPOSE: A producing method of graphene, and a lamination structure including a graphene layer are provided to economically produce the graphene using silicon instead of silicon carbide single crystal. CONSTITUTION: A lamination structure comprises a silicon layer, a silicon carbide layer formed on the silicon layer, and a graphene layer formed on the silicon carbide layer. The silicon carbide layer and the graphene layer are formed in situ. The silicon carbide layer is produced by carbonizing the surface of the silicon layer. The graphene layer is epitaxial-grown.</p> |
