| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas sensor maintaining performance stably for a long period, and having a stable characteristic, a high manufacturing yield, and high response speed. SOLUTION: This gas sensor is equipped with a p-type domain 6 provided from the surface to the inside of an n-type SiC substrate 1, a catalyst 3 arranged on the surface of the p-type domain, a p-side electrode 11 positioned on the catalyst 3, a source electrode 21 and a drain electrode 22, an n-type channel for connecting a source to a drain in contact with the p-type domain in the substrate, and an n-side electrode 12 positioned on the rear surface of an n-type domain of a semiconductor substrate. In the gas sensor, a voltage is applied between the n-side electrode and the p-side electrode with the catalyst 3 interposed therebetween, and a reverse bias voltage is applied to a p-n junction 15. COPYRIGHT: (C)2010,JPO&INPIT
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