| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming Cu wiring capable of obtaining Cu wiring of low resistance by embedding Cu or a Cu alloy in a fine recess with high occupancy and an excellent embedding property, and a manufacturing method of a semiconductor device.SOLUTION: According to the method for forming the Cu wiring, the Cu wiring is formed by embedding Cu or the Cu alloy in the recess for a substrate including a layer insulation film with which the recess of a predetermined pattern is formed on a surface. The method for forming the Cu wiring includes the steps of: forming a barrier film over the entire surface of the layer insulation film; next forming a layer to be wet, the layer to be wet being formed from a metal material by which Cu or the Cu alloy is get wet, in any other portion than the recess on a surface of the barrier film; then forming a Cu-based film formed from Cu or a Cu alloy over the surface; and then heating the substrate after the Cu-based film is formed, making Cu or the Cu alloy on the surface of any other portion than the recess flow into the recess, and embedding Cu or the Cu alloy.SELECTED DRAWING: Figure 9 |
