发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
This patent document provides an electronic device including a semiconductor memory that can simplify a fabrication process and improve characteristics of a variable resistance element, and a method for fabricating the same. In one aspect, an electronic device including a semiconductor memory is provided, wherein the semiconductor memory includes: a substrate; a variable resistance element formed over the substrate and exhibiting different resistance states to store data; an interlayer insulating layer formed over the substrate to surround at least a portion of the variable resistance element; an upper electrode contact formed over the variable resistance element to penetrate a portion of the interlayer insulating layer and be in contact with the variable resistance element; and a metal wiring formed over the interlayer insulating layer, and configured to include a stacked structure of a tungsten layer and a barrier layer, wherein the barrier layer is in contact with the upper electrode contact and includes tungsten, boron and iridium. |
申请公布号 |
US2016181204(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
US201514846808 |
申请日期 |
2015.09.06 |
申请人 |
SK hynix Inc. |
发明人 |
Do Kwan-Woo |
分类号 |
H01L23/532;G06F12/08;H01L43/08;H01L23/528;H01L45/00;H01L43/02 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic device comprising a semiconductor memory, the semiconductor memory comprising:
a substrate; a variable resistance element formed over the substrate and exhibiting different resistance states to store data; an interlayer insulating layer formed over the substrate to surround at least a portion of the variable resistance element; an upper electrode contact formed over the variable resistance element to penetrate a portion of the interlayer insulating layer and be in contact with the variable resistance element; and a metal wiring formed over the interlayer insulating layer, and comprising a stacked structure of a tungsten layer and a barrier layer, wherein the barrier layer is in contact with the upper electrode contact and comprises tungsten, boron and iridium. |
地址 |
Icheon-Si KR |