SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

主权项

1. A semiconductor light emitting device, comprising:
a first conductivity-type semiconductor base layer; a plurality of light emitting nanostructures disposed spaced apart from one another on a surface of the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively; and first and second electrodes electrically connected to the first conductivity-type semiconductor base layer and the second conductivity-type semiconductor layer, respectively, wherein the electric charge blocking layer has different thicknesses on first and second crystal planes of the first conductivity-type semiconductor core and includes an impurity having a first concentration, the second conductivity-type semiconductor layer includes the impurity having a second concentration, and the first concentration is half or less of the second concentration.