Voltage controlled oscillator, semiconductor device, and electronic device

摘要

A low-power voltage controlled oscillator is provided. The voltage controlled oscillator includes (2n+1) first circuit components (n is an integer of one or more). An output terminal of the first circuit component in a k-th stage (k is an integer of one or more and 2n or less) is connected to an input terminal of the first circuit component in a (k+1)-th stage. An output terminal of the first circuit component in a (2n+1)-th stage is connected to an input terminal of the first circuit component in a first stage. One of the first circuit components includes a second circuit component and a third circuit component whose input terminal is connected to an output terminal of the second circuit component. The third circuit component includes a first transistor and a second transistor whose source-drain resistance is controlled in accordance with a signal input to a gate through the first transistor.

主权项

1. A voltage controlled oscillator comprising:
(2n+1) first circuit components, where n is an integer of one or more, wherein an output terminal of the first circuit component in a k-th stage is connected to an input terminal of the first circuit component in a (k+1)-th stage, where k is an integer of one or more and 2n or less, wherein an output terminal of the first circuit component in a (2n+1)th stage is connected to an input terminal of the first circuit component in a first stage, wherein one of the first circuit components includes a second circuit component including any of an inverter, a NAND circuit, and a NOR circuit and a third circuit component whose input terminal is connected to an output terminal of the second circuit component, wherein the third circuit component includes a first transistor and a second transistor whose source-drain resistance is controlled in accordance with a signal input to a gate of the second transistor through the first transistor, and wherein the first transistor includes a channel formation region in an oxide semiconductor film and the second transistor includes a channel formation region in a semiconductor substrate.