Semiconductor device and method for manufacturing the semiconductor device

摘要

A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more when the surface of the SiC semiconductor layer is covered with an insulating film.

主权项

1. A semiconductor device comprising:
an SiC semiconductor layer; and a semiconductor element including impurity regions selectively formed in the surface of the SiC semiconductor laver, wherein a carrier lifetime of the SiC semiconductor layer is 30 μsec or more, the semiconductor element includes a MOSFET, and the MOSFET includes: a first conductive type source region, a second conductive type body region formed so as to surround the source region, and a gate electrode formed on the SiC semiconductor layer with a gate oxide film therebetween.