Insulation structure formed in a semiconductor substrate and method for forming an insulation structure

摘要

A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in a vertical direction.

主权项

1. A method, comprising:
forming a trench in a semiconductor fin, the semiconductor fin comprising active regions of at least two semiconductor devices, the trench extending from a first surface into the semiconductor fin, the trench having a first width in a horizontal direction of the semiconductor fin; and forming a void spaced apart from the first surface in a vertical direction of the semiconductor fin, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in the vertical direction, wherein the trench and the void form an insulation structure that dielectrically insulates the active regions of neighboring semiconductor devices of the semiconductor fin.