Method of growing III-N semiconductor layer on Si substrate

摘要

A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.

主权项

1. A method of growing III-N semiconducting material on a silicon substrate comprising the steps of:
providing a single crystal silicon substrate; growing a layer of epitaxial rare earth oxide on the silicon substrate, the layer of epitaxial rare earth oxide having a surface; terminating the surface of the layer of epitaxial rare earth oxide with nitrogen forming a nitrogen atom template; growing a layer of III-N material on the nitrogen terminated surface of the layer of epitaxial rare earth oxide; and growing a layer of bulk epitaxial III-N semiconductive material on the layer of III-N material.