| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and a semiconductor manufacturing method, which can form a film having a film thickness favorable in in-plane uniformity.SOLUTION: According to one embodiment, a semiconductor manufacturing device comprises: a housing part for housing a substrate; and a first flow channel having a plurality of openings for discharging a first gas to the inside of the housing part. The device further comprises a second flow path having a plurality of second openings different from the first openings in number and size, for discharging the first gas to the inside of the housing part. The device further comprises a control part for controlling supply of the first gas to the first and second flow channels in such a manner that the first gas is discharged from the first openings at a first flow rate and the first gas is discharged from the second openings at a second flow rate different from the first flow rate.SELECTED DRAWING: Figure 1 |
