| 摘要 |
PROBLEM TO BE SOLVED: To inspect a nonvolatile memory without causing deterioration of normal memory cells due to repeated rewriting of data.SOLUTION: A nonvolatile memory inspection method, which is a method for inspecting a nonvolatile memory including a memory cell for which a transistor having a control gate, floating gate, source, and drain is provided, includes: a step S11 for bringing the memory cell into an erased state; a step S12 for bringing the drain in the transistor of the memory cell into a floating state, and applying a first potential and second potential to the control gate and source, respectively; a step S13 for reading data from the memory cell; and a step S14 for determining whether or not the memory cell is normal or defective on the basis of the data read from the memory cell.SELECTED DRAWING: Figure 5 |
