P-type doping layers for use with light emitting devices

摘要

A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

主权项

1. A light emitting diode (LED), comprising:
a substrate; an n-doped Group III-V semiconductor layer adjacent the substrate; a u-doped Group III-V layer adjacent the n-doped Group III-V semiconductor layer, the u-doped layer generating V-pits;
an active layer adjacent the u-doped Group III-V semiconductor layer, the active layer comprising a portion that extends into the V-pits;an electron blocking layer adjacent the active layer, the electron blocking layer comprising a portion that extends into the V-pits; anda p-doped Group III-V semiconductor layer adjacent the electron blocking layer, the p-doped Group III-V semiconductor layer comprising a portion that extends into the V-pits, wherein:
the portion of the p-doped Group III-V semiconductor layer that extends into the V-pits is a first portion;the p-doped Group III-V semiconductor layer additionally comprises a second portion that does not extend into the V-pits; anddopant characteristics of the first portion differ from dopant characteristics of the second portion.