Complementary high mobility nanowire neuron device

摘要

A method for forming a semiconductor device includes providing a substrate structure, which includes a nanowire structure supported by two isolation regions on a substrate. The nanowire structure includes a first nanowire and a second nanowire having different high mobility semiconductor materials and conductivity types. A multi-layer film structure is formed surrounding the nanowire structure and includes a conductive material layer sandwiched between two dielectric layers. A plurality of first electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the first nanowire, and a plurality of second electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the second nanowire. A third electrode is formed to contact one end of the nanowire structure, and a fourth electrode is formed to contact the other end of the nanowire structure. A fifth electrode is formed and coupled to a center portion of the nanowire structure.

主权项

1. A method for forming a semiconductor device, comprising:
providing a substrate structure, the substrate structure including:
a substrate;a plurality of isolation regions in the substrate;a cavity between adjacent isolation regions; anda nanowire structure having a first nanowire and a second nanowire suspended in the cavity, the first and second nanowires, respectively, including a first end region, a channel region, and a second end region; wherein the first end region of the first nanowire is connected to the first end region of said second nanowire, the first nanowire having a first conductivity type and the second nanowire having a second conductivity type different from the first conductivity type; forming a multi-layer film structure surrounding the nanowire structure, the multi-layer film structure including a first dielectric layer, a conductive material layer, and a second dielectric layer; forming a plurality of first electrodes surrounding the multi-layer film structure at the channel region of the first nanowire, the plurality of first electrodes being separated from each other; forming a plurality of second electrodes surrounding the multi-layer film structure at the channel region of the second nanowire, the plurality of second electrodes being separated from each other; introducing dopants of the first conductivity type into the first and second end regions of the second nanowire, and introducing dopants of the second conductivity type into the first and second end regions of the second nanowire; and forming a third electrode surrounding the second end region of the first nanowire; forming a fourth electrode surrounding the second end region of the second nanowire; removing a nanowire of the multi-layer film structure to expose the first end region of the first nanowire and the first end region of the second nanowire; and forming a fifth electrode coupled to the exposed first end region of the first nanowire and the exposed first end region of the second nanowire, the fifth electrode being insulated from the conductive material layer in the multi-layer film structure; wherein, the nanowire structure is supported on the substrate by the plurality of first electrodes, the plurality of second electrodes, the third electrode, the fourth electrode, and the fifth electrode support.