Non-planar quantum well device having interfacial layer and method of forming same

摘要

Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.

主权项

1. A system comprising:
a memory; at least one of a processor and a controller coupled to the memory; and a non-planar quantum well device comprising:
a quantum well structure comprising a quantum well layer and at least one of a IV and III-V material barrier layer, the quantum well layer including a channel region;a fin structure (a) in the quantum well structure, and (b) including the quantum well layer;a high-k layer over the fin structure; anda gate metal over the high-k layer.