发明名称 |
Schottky clamped radio frequency switch |
摘要 |
Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating. |
申请公布号 |
US9502433(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201514929206 |
申请日期 |
2015.10.30 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Nygaard Paul A. |
分类号 |
H01L29/78;H01L27/12;H01L29/786;H01L21/84;H01L27/06;H01L27/07 |
主分类号 |
H01L29/78 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A radio frequency switch with a clamped body comprising:
a channel that separates a source and a drain; a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region; a matching clamp region that spans the channel; wherein the matching clamp region and the clamp region are spaced apart by less than 20 microns; wherein the matching clamp region and the clamp region are at least 0.2 microns wide along the overall width of the channel and wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. |
地址 |
San Diego CA US |