发明名称 Schottky clamped radio frequency switch
摘要 Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.
申请公布号 US9502433(B2) 申请公布日期 2016.11.22
申请号 US201514929206 申请日期 2015.10.30
申请人 QUALCOMM Incorporated 发明人 Nygaard Paul A.
分类号 H01L29/78;H01L27/12;H01L29/786;H01L21/84;H01L27/06;H01L27/07 主分类号 H01L29/78
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A radio frequency switch with a clamped body comprising: a channel that separates a source and a drain; a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region; a matching clamp region that spans the channel; wherein the matching clamp region and the clamp region are spaced apart by less than 20 microns; wherein the matching clamp region and the clamp region are at least 0.2 microns wide along the overall width of the channel and wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions.
地址 San Diego CA US