发明名称 |
Semiconductor device having a substrate including a first active region and a second active region |
摘要 |
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region. |
申请公布号 |
US9502417(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201615046572 |
申请日期 |
2016.02.18 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Ju-Youn;Jang Hyung-Soon;Youn Jong-Mil;Ha Tae-Won |
分类号 |
H01L21/70;H01L27/092;H01L29/423;H01L21/8238;H01L29/49;H01L29/51;H01L29/06;H01L29/161;H01L29/20;H01L29/165;H01L29/78;H01L27/02 |
主分类号 |
H01L21/70 |
代理机构 |
Onello & Mello, LLP. |
代理人 |
Onello & Mello, LLP. |
主权项 |
1. A semiconductor device comprising:
a substrate including a first active region, a second active region and a field region, the field region between and directly contacting the first and the second active regions; an interlayer dielectric layer disposed on or above the substrate and including a trench, wherein the interlayer dielectric layer extends from the first active region to the second active region; a gate structure formed in the trench extends from the first active region to the second active region; and a spacer formed on a sidewall of the gate structure, wherein a top surface of a spacer and the top surface of the gate structure are substantially coplanar with each other, and wherein the gate structure comprises:
a gate dielectric layer formed along sidewalls and a bottom surface of the trench;a p-type metal gate electrode formed on the first active region; andan n-type metal gate electrode formed on the second active region, wherein the p-type metal gate electrode and the n-type metal gate electrode contact each other at a contact surface therebetween which is closer to the first active region than to the second active region. |
地址 |
KR |