| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure. |
| 申请公布号 |
US9502259(B2) |
申请公布日期 |
2016.11.22 |
| 申请号 |
US201414533105 |
申请日期 |
2014.11.05 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Li Jhen-Cyuan;Lu Shui-Yen |
| 分类号 |
H01L27/108;H01L29/94;H01L21/308;H01L29/66;H01L29/78;H01L21/02;H01L21/311 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor device, comprising:
a substrate; and a fin-shaped structure having a top portion and a bottom portion on the substrate, wherein the top surface of the bottom portion is greater than the bottom surface of the top portion and the fin-shaped structure comprises a source/drain region. |
| 地址 |
Hsin-Chu TW |
