| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one fin-shaped structure thereon, in which the fin-shaped structure comprises a top portion and a bottom portion; and forming a doped layer and a first liner around the bottom portion of the fin-shaped structure. |
| 申请公布号 |
US9502252(B2) |
申请公布日期 |
2016.11.22 |
| 申请号 |
US201514637400 |
申请日期 |
2015.03.04 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Feng Li-Wei;Tsai Shih-Hung;Lin Chao-Hung;Liu Hon-Huei;Hong Shih-Fang;Jenq Jyh-Shyang |
| 分类号 |
H01L21/225;H01L21/8238;H01L21/324;H01L27/092 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having at least one fin-shaped structure thereon and a hard mask on the fin-shaped structure, wherein the fin-shaped structure comprises a top portion and a bottom portion; forming a second liner on the top portion and the bottom portion of the fin-shaped structure, wherein a top surface of the second liner contacts a bottom surface of the hard mask; and forming a doped layer and a first liner around the bottom portion of the fin-shaped structure. |
| 地址 |
Hsin-Chu TW |
