发明名称 |
Inhibiting diffusion of elements between material layers of a layered circuit structure |
摘要 |
Methods for fabricating a layered circuit structure are provided, which include, for instance: depositing a first material layer above a substrate, the first material layer having an oxidized upper surface; providing a second material layer over the oxidized upper surface of the first material layer; and inhibiting diffusion of one or more elements from the oxidized upper surface of the first material layer into either the first material layer or the second material layer during the providing of the second material layer over the oxidized upper surface of the first material layer. The inhibiting may include one or more of modifying a characteristic(s) of the first material layer, forming a protective layer over the oxidized upper surface of the first material layer, or altering at least one process parameter employed in providing the second material layer. |
申请公布号 |
US9502232(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201414321866 |
申请日期 |
2014.07.02 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Gu Sipeng;Gaan Sandeep;Sun Zhiguo;Liu Huang;Selsley Adam |
分类号 |
H01L21/02;H01L21/321 |
主分类号 |
H01L21/02 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. ;Davis Nathan |
主权项 |
1. A method comprising:
fabricating a layered circuit structure, the fabricating comprising:
depositing a first material layer above a substrate, the first material layer comprising an oxidized upper surface;providing a second material layer directly over the oxidized upper surface of the first material layer; andinhibiting diffusion of one or more elements from the oxidized upper surface of the first material layer into either the first material layer or the second material layer during the providing of the second material layer over the oxidized upper surface of the first material layer. |
地址 |
Grand Cayman KY |