发明名称 Solar cell and method of manufacturing the same
摘要 A solar cell is disclosed. The solar cell includes a transparent conductive layer formed on a substrate, microstructures protruding vertically aslant from a surface of the transparent conductive layer, an electron transport layer configured to cover the microstructures and formed of an electron transport metal oxide, a light absorber adhered to inner pores and a surface of the electron transport layer, a hole transport layer configured to cover the surface of the electron transport layer and formed of a hole transport material, and an electrode formed on the hole transport layer. In the solar cell, the thickness of a light absorption layer can be maximized to obtain a high current density and high photoelectric conversion efficiency.
申请公布号 US9502182(B2) 申请公布日期 2016.11.22
申请号 US201414158002 申请日期 2014.01.17
申请人 RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 Jung Hyun Suk;Han Gill Sang;Chung Hyun Suk
分类号 H01L31/044;H01G9/00;H01L51/42;H01L51/44;H01L51/00 主分类号 H01L31/044
代理机构 代理人
主权项 1. A solar cell comprising: a substrate; a transparent conductive layer disposed on the substrate; microstructures extending substantially perpendicular to a surface of the transparent conductive layer; an electron transport layer comprising an electron transport metal oxide disposed to fill at least part of space between the microstructures and cover the microstructures; a light absorber adhered to inner pores and a surface of the electron transport layer; a solid hole transport layer disposed to fill inner pores of the electron transport layer and cover the surface of the electron transport layer to which the light absorber is attached; and an electrode disposed on the hole transport layer, wherein the electron transport layer comprises: an electron transport thin film configured to coat the microstructures and the surface of the transparent conductive layer; and an electron transport nanoparticle layer disposed on the electron transport thin film and having a porosity high than that of the electron transport thin film.
地址 Suwon-si KR