发明名称 |
Semiconductor element with N channel and P region connected only to the channel and liquid crystal display device using the same |
摘要 |
To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode, a thin polysilicon film 10 is provided with a p-type semiconductor region 13 in contact with a channel region 14. The p-type semiconductor region 13 is electrically connected to nowhere except the channel region 14. Holes induced on the surface due to a gate-negative pulse are further supplied from the p-type semiconductor region 13. An electric field established by the gate-negative pulse is relaxed by the holes, fewer hot holes are injected into the gate oxide film, and the TFT characteristics are less deteriorated.
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申请公布号 |
US6166786(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980074314 |
申请日期 |
1998.05.08 |
申请人 |
HITACHI, LTD. |
发明人 |
OHKUBO, TATSUYA;KAWACHI, GENSHIRO;MIKAMI, YOSHIRO;MASUDA, KAZUHITO;KAGEYAMA, HIROSHI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):G02F1/136;H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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