| 摘要 |
Photoresist base materials consisting of extreme ultraviolet sensitive organic compounds represented by the general formula (1): (1) [wherein A is a central structure consisting of an aliphatic group having 1 to 50 carbon atoms, an aromatic group having 6 to 50 carbon atoms, an organic group bearing both, or an organic group having a cyclic structure formed by repetition of these groups; B to D are each an extreme ultraviolet sensitive group, a group exhibiting a reactivity on the action of a chromophore sensitive to extreme ultraviolet rays, a C1-50 aliphatic or C6-50 aromatic group having such a group, an organic group having both groups, or a substituent having a branched structure; X to Z are each a single bond or an ether linkage; l to n are integers of 0 to 5 satisfying the relationship: l + m + n > 1; and A to D may each have a heteroatom-bearing substituent]. The invention provides photoresist base materials and photoresist compositions which enable ultrafine lithography with extreme ultraviolet rays or the like.
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