| 摘要 |
PURPOSE: A mask blank, a transfer mask, and their manufacturing methods are provided to increase an etching rate for Cl-based dry etching by suppressing the oxidation of tantalum by nitrogen. CONSTITUTION: A mask blank includes a light shielding film(19) on a light-transmissive substrate(11) and is used for manufacturing a transfer mask to which the exposure light of an ArF excimer laser is applied. In the light shielding film, a light shielding layer(12) and a surface reflection preventing layer(13) are laminated from the light-transmissive substrate. The light shielding layer is made of materials containing tantalum and nitrogen. The surface reflection preventing layer comprises tantalum and silicon and is made of materials containing one or more elements selected from oxygen and nitrogen. |
