| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve improvement in polishing rate, decrease in scratch, reduction of variation in polishing level in a wafer surface, and decrease in consumption of polishing slurry, and furthermore to achieve appropriate holding of the slurry between an object and a polishing pad, with a value of polishing rate kept appropriate, and with in-plane uniformity of the object improved after polishing. <P>SOLUTION: A polishing pad 3 used for chemical mechanical polishing has (a) a plurality of grooves 1 having a closed shape which do not intersect with each other, and (b) a plurality of polishing-dust exhaust grooves 2 that intersect with the grooves having the closed shape at one point or more, respectively; wherein depth (D<SB>1</SB>) of the groove having the closed shape and depth (D<SB>2</SB>) of the polishing-dust exhaust groove satisfy a relationship expressed by the following formula: D<SB>1</SB><D<SB>2</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
