| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric device that can recover an oxygen defect portion formed on a piezoelectric layer due to plasma during etching and improve performance of the piezoelectric device. <P>SOLUTION: The method of manufacturing the piezoelectric device includes a process of forming a lower electrode layer 23, the piezoelectric layer 24, and an upper electrode layer 25 over a semiconductor substrate 21, and an etching processing process of etching the upper electrode layer 25, piezoelectric layer 24, and lower electrode layer 23, and is provided with a process of recovering piezoelectric characteristics of the piezoelectric layer 24 by re-combining oxygen 28 with the oxygen defective portion 27 formed on a surface of the piezoelectric layer 24 in the etching processing process, the recovery processing process being carried out at a temperature equal to or lower than a Curie temperature of the piezoelectric layer 24. <P>COPYRIGHT: (C)2011,JPO&INPIT |
