| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve efficiency of read and write of an error detection code and actual data, in a storage device. <P>SOLUTION: The storage device includes: a nonvolatile memory cell array; and a memory control circuit executing data write into and data read from the memory cell array in access units of N bits (N is a prescribed integer of 2 or above). The memory cell array has a rewritable area, and a read-only area. The rewritable area is configured such that the N bits constituting the access unit include both the actual data and the error detection code. The read-only area is divided into an actual data area wherein the N bits constituting the access unit include only the actual data and an error detection code area wherein the N bits constituting the access unit include only the error detection code. <P>COPYRIGHT: (C)2011,JPO&INPIT |
