| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has wiring structure with high withstand voltage characteristic and leakage resistance characteristic, and to provide its manufacturing method. SOLUTION: The semiconductor device includes: a semiconductor substrate wherein semiconductor elements are provided; a connection member which is formed on the semiconductor substrate and electrically connect conductive members of upper and lower layers; a spacer film which is formed being in contact with a part from the lower side of the side surface of the connection member; a first insulation film formed in the same layer as the connection member; wiring which is formed being in contact with a part of the upper surface of the connection member; and a second insulation film which is formed being in contact with a part of the upper surface of the connection member, at least a part from the upper side of the side surface and a part of the side surface of the wiring. COPYRIGHT: (C)2009,JPO&INPIT
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