发明名称 SURFACE EMISSION TYPE SEMICONDUCTOR LASER ARRAY AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface emission type semiconductor laser array capable of controlling the polarizing direction of laser beams and being easily integrated and a manufacturing method for the surface emission type semiconductor laser array. SOLUTION: The surface emission type semiconductor laser array 100 has a vertical resonator 140 in the upper section of a substrate 101. In the surface emission type semiconductor laser array 100, the vertical resonator 140 contains a first mirror 102, an active layer 103 and a second mirror 104. In the surface emission type semiconductor laser array 100, the vertical resonator 140 has a plurality of unit resonators 110 arranged in one direction and connecting sections 120 mutually connecting the adjacent unit resonators 110. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009088333(A) 申请公布日期 2009.04.23
申请号 JP20070257483 申请日期 2007.10.01
申请人 SEIKO EPSON CORP 发明人 NAKAWA TOMOFUMI
分类号 H01S5/42;H01S5/183;H01S5/343 主分类号 H01S5/42
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