Apparatus and method of storing data at a multi-bit storage element

摘要

A storage device includes non-volatile memory and a controller. A method performed in the data storage device includes receiving, at the controller, first data to be stored at the non-volatile memory. The method further includes sending, from the controller, the first data, first dummy data, and second dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory. The single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states. The first dummy data and the second dummy data prevent a storage element of the single physical page from being programmed to a particular voltage state of the multiple voltage states.

主权项

1. A data storage device comprising:
a non-volatile memory including a block having multiple word lines, each of the word lines including one or more physical pages, each physical page including multiple storage elements that are programmable into multiple voltage states; and a controller coupled to the non-volatile memory, the controller configured to:
receive first data to be stored on the non-volatile memory; andsend dummy data to alternating word lines of the multiple word lines within the block, wherein the dummy data and at least a portion of the first data are stored at respective logical pages of a single physical page in the non-volatile memory,wherein the dummy data includes first dummy data and second dummy data, and wherein the controller is configured to set values of the first dummy data and the second dummy data to reduce a capacitance associated with a particular storage element of the single physical page by preventing the particular storage element of the single physical page from being programmed to a highest voltage state of the multiple voltage states.