Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks

摘要

Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

主权项

1. An array of nonvolatile nanotube block switches, comprising:
a first plurality of conductive traces arranged substantially parallel to each other in a first plane; a second plurality of conductive traces arranged substantially parallel to each other in a second plane, said second plane substantially parallel to said first plane; a plurality of nonvolatile nanotube blocks arranged in a third plane, said third plane substantially parallel to and situated between said first plane and said second plane; wherein said nonvolatile nanotube blocks comprise a patterned nanotube fabric having a top surface and a bottom surface; wherein each nonvolatile nanotube block within said plurality of nonvolatile nanotube blocks is situated at a cross point of a conductive trace within said first plurality of conductive traces and a conductive trace within said second plurality of conductive traces; and wherein said top surface of each nonvolatile nanotube block within said plurality of nonvolatile nanotube blocks is in electrical communication with a conductive trace within said first plurality of conductive traces and said bottom surface of each nonvolatile nanotube block within said plurality of nonvolatile nanotube blocks is in electrical communication with a conductive trace within said second plurality of conductive traces.