| 摘要 |
Provided are a method for manufacturing an SiC semiconductor device whereby defects in an SiC epitaxial film formed on an SiC substrate can be reduced, and an SiC semiconductor device obtained by the method. A method for manufacturing an SiC semiconductor device, the method including a step (A) for forming an SiC epitaxial film on an SiC substrate, a step (B) for performing chemical mechanical polishing of the surface of the epitaxial film and planarizing the epitaxial film until the arithmetic mean roughness Ra thereof is 0.3 nm or less, a step (C) for thermally oxidizing the surface of the epitaxial film and forming a sacrificial oxide film, a step (D) for removing the sacrificial oxide film, and a step (E) for washing, with pure water, the surface of the epitaxial film from which the sacrificial oxide film is removed. |
