POLYSILICON THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

摘要

Provided are a polysilicon thin-film transistor, an array substrate, a manufacturing method therefor and a display device. The manufacturing method for the polysilicon thin-film transistor comprises: forming a polysilicon active layer (2); successively forming a first gate insulation layer (3) and a first gate (4) on the active layer (2), wherein the projection of the first gate (4) is located in two end margins of the active layer (2); primarily injecting ions into the active layer (2) by adopting the first gate (4) as a mask, and forming two doped areas (8) at two sides of the active layer (2) respectively; successively forming a second gate insulation layer (5) and a second gate (9) on the first gate insulation layer (3) and the first gate (4), wherein the projections of two end margins of the second gate (9) are respectively located between the projection of the first gate (4) and two end margins of the active layer (2); and secondarily injecting ions into the active layer (2) by adopting the second gate (9) as a mask, thereby forming two source/drain injection areas (10) at parts outside the two doped areas (8) of the active layer (2) respectively, wherein the impurity concentration of the two doped areas (8) is smaller than that of the two source/drain injection areas (10).