Sense amplifier of a memory cell

摘要

A sense amplifier of a memory cell having a sense voltage generating circuit configured to generate a sense voltage; and a sensing circuit configured to compare a bitline voltage of the memory cell with the sense voltage, and to output a digital output signal indicating a content of the memory cell, wherein during a sense phase, the sensing circuit is decoupled from a voltage supply which charges a bitline capacitance during a precharge phase, and is coupled to and supplied by the bitline capacitance. The sense voltage generating circuit may be further configured to generate a sense voltage that during a precharge phase is dependent on the voltage supply and during a sense phase is independent of the voltage supply.

主权项

1. A sense amplifier of a memory cell, comprising:
a sense voltage generating circuit configured to generate a sense voltage; and a sensing circuit comprising circuit elements configured to form a current sensing path indicating a content of the memory cell, compare a bitline voltage of the memory cell with the sense voltage, and output a digital output signal indicating the content of the memory cell, wherein the sensing circuit comprises:
a voltage detector coupled between the bitline of the memory cell and the output of the sensing circuit; anda current source coupled between the out put of the sensing circuit and voltage source, and wherein during a sense phase:
the voltage detector is configured to discharge the bitline capacitance of the memory cell to the output of the sensing circuit when the bitline voltage of the memory cell is greater than the sense voltage,the current source is configured to discharge the output of the sensing circuit to the voltage source when the bitline voltage of the memory cell is less than the sense voltage, andall the circuit elements of the sensing circuit are decoupled from a voltage supply which charges a bitline capacitance during a precharge phase, and are coupled to and supplied by the bitline capacitance.