Semiconductor device comprising a first inverter and a second inverter

摘要

A semiconductor device which is downsized while a short-channel effect is suppressed and whose power consumption is reduced is provided. A downsized SRAM circuit is formed, which includes a first inverter including a first transistor and a second transistor overlapping with each other; a second inverter including a third transistor and a fourth transistor overlapping with each other; a first selection transistor; and a second selection transistor. An output terminal of the first inverter, an input terminal of the second inverter, and one of a source and a drain of the first selection transistor are connected to one another, and an output terminal of the second inverter, an input terminal of the first inverter, and one of a source and a drain of the second selection transistor are connected to one another.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first inverter; and a second inverter, wherein an output terminal of the first inverter is electrically connected to an input terminal of the second inverter, wherein an output terminal of the second inverter is electrically connected to an input terminal of the first inverter, wherein each of the first inverter and the second inverter comprises a first transistor and a second transistor, wherein the first transistor comprises:
the semiconductor substrate having a source region and a drain region, wherein the semiconductor substrate has a groove portion arranged between the source region and the drain region;a first gate insulating film formed on a side surface and a bottom surface of the groove portion; anda gate electrode formed in the groove portion with the first gate insulating film provided between the semiconductor substrate and the gate electrode, wherein the first transistor and the second transistor share the gate electrode, and wherein the second transistor comprises:
a second gate insulating film covering the gate electrode;a semiconductor film overlapping with the gate electrode with the second gate insulating film provided therebetween; anda pair of electrodes in contact with the semiconductor film, wherein the pair of electrodes is formed between the second gate insulating film and the semiconductor film.