发明名称 Detector remodulator
摘要 A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.
申请公布号 US9513498(B2) 申请公布日期 2016.12.06
申请号 US201514629922 申请日期 2015.02.24
申请人 Rockley Photonics Limited 发明人 Jones Haydn Frederick;Rickman Andrew;Zilkie Aaron John
分类号 G02F1/035;G02F1/025;H04B10/29;G02F2/00;G02B6/42;G02B6/43;G02F1/225;G02F1/015;G02F1/21 主分类号 G02F1/035
代理机构 Lewis Roca Rothgerber Christie LLP 代理人 Lewis Roca Rothgerber Christie LLP
主权项 1. A detector remodulator comprising: a silicon on insulator (SOI) chip; a detector coupled to a first input waveguide; a SiGe or homogeneous Si modulator, on the SOI chip, coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the modulator includes a waveguide including a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region; wherein: the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region,the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, andthe electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit.
地址 London GB