发明名称 WIRING PATTERN MANUFACTURING METHOD, TRANSISTOR MANUFACTURING METHOD, AND TRANSFER MEMBER
摘要 The purpose of the present invention is to provide a new method as a technology replacing the conventional technology for obtaining a thin film with a wiring pattern. The method for manufacturing a wiring pattern according to the present invention is characterized by being provided with: a laminate forming step of forming a laminate by bringing a first member having a resist layer and a metal layer formed on the resist layer, and a second member having a substrate into contact with each other; a resist layer patterning step of patterning the resist layer; and an etching step of selectively removing the metal layer.
申请公布号 WO2016204207(A1) 申请公布日期 2016.12.22
申请号 WO2016JP67870 申请日期 2016.06.16
申请人 NIKON CORPORATION 发明人 NAKAZUMI Makoto;NISHI Yasutaka;NARA Kei
分类号 H01L21/28;H01L21/336;H01L29/417;H01L29/786 主分类号 H01L21/28
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