THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A thin film transistor and a manufacturing method therefor, an array substrate and a display device. The manufacturing method comprises a step of forming a low-temperature polycrystalline silicon active layer. A substrate has a first region (101) and a second region (102). The step comprises: forming a buffer layer (20) on the first region (101) and the second region (102) of the substrate (10), the thickness of the buffer layer (20) corresponding to the first region (101) being greater than the thickness of the buffer layer (20) corresponding to the second region (102); or forming a buffer layer (20) on the first region (101) of the substrate (10); forming an amorphous silicon layer (30) on the buffer layer (20); performing laser crystallization on the amorphous silicon layer (30) to convert the amorphous silicon layer (30) into a polycrystalline silicon layer (40); removing the polycrystalline silicon layer (40) on the second region (102), so as to form the low-temperature polycrystalline silicon active layer (01) on the first region (101).