| 摘要 |
A silicon wafer distribution state sensing method and device provided with a distributed image sensing unit. A first image sensing unit (41) is disposed above a silicon wafer group (2), a silicon wafer stacking image is taken from overhead, and it is determined whether a deviation threshold is exceeded in the placement of silicon wafers in the silicon wafer group (2); a second image sensing unit (42) is fixedly disposed in an unblocked position just opposite to a silicon wafer support structure, the second image sensing unit (42) comprising multiple image sensors distributed on the periphery of a loader; a distribution image of the side plane images of the placement position of each silicon wafer is collected at a specified time interval along the parallel direction of the silicon wafers according to the vertical movement speed and the reference position of the loader (3), and it is determined whether there exists an anomalous distribution of protruding wafers, inclined wafers, stacked wafers and/or hollow wafers among the corresponding silicon wafers. By means of the method, it can be quickly determined whether an anomalous protruding state exists among the silicon wafers. Test results are not affected by the surface temperature of the silicon wafers, thus further improving test accuracy. |
