发明名称 Method for removing surface contamination on semiconductor substrates
摘要 A method for removing contaminants on a semiconductor substrate is disclosed. In one embodiment, the method includes forming a dielectric structure on the semiconductor substrate. A portion of an electrically conducting region to a side of the dielectric structure is etched, and a conductive material is deposited on the etched electrically conducting region.
申请公布号 US2002111023(A1) 申请公布日期 2002.08.15
申请号 US20010782343 申请日期 2001.02.12
申请人 CAO DENSEN;LOSEE BECKY 发明人 CAO DENSEN;LOSEE BECKY
分类号 H01L21/302;H01L21/306;H01L21/308;H01L21/311;H01L21/3213;H01L21/336;H01L29/78;(IPC1-7):H01L21/302 主分类号 H01L21/302
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