| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a drive circuit for collectively test the breakdown voltage characteristics of a plurality of output transistors without measuring using a probe needle. <P>SOLUTION: The drive circuit 1 includes output transistors T1-Tm made of high breakdown voltage P-channel type MOS transistors, switching control circuits SCL1-SCLm, output terminals P1-Pm, and diodes DO1-DOm, respectively, and further includes a control terminal PX on a semiconductor chip 2. The diodes DO1-DOm are made of high breakdown voltage P-channel type MOS transistors in which the source and gate are connected in common. The anodes of the diodes DO1-DOm are connected to the drains d1-dm of the corresponding output terminals P1-Pm, respectively. The cathodes of the diodes DO1-DOm are connected in common to the control terminal PX through a wiring 3. <P>COPYRIGHT: (C)2011,JPO&INPIT |
