| 摘要 |
A magnetic random access memory includes first and second write wirings, the second write wiring having first and second crossing angles formed by crossing the first write wiring, a first magnetoresistive element having a first axis of easy magnetization directed to a side of the first crossing angle and having a first recording layer including first and second ferromagnetic layers and a first nonmagnetic layer, and a second magnetoresistive element being electrically connected to the first magnetoresistive element, having a second axis of easy magnetization directed to a side of the second crossing angle, and having a second recording layer including third and fourth ferromagnetic layers and a second nonmagnetic layer, wherein in a write operation, magnetizations in the first and second recording layers execute a toggle operation by using the first and second write wirings.
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