| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily obtain at low cost a high-quality independent group 3-5 nitride semiconductor substrate. <P>SOLUTION: In the present manufacturing method, dry etching treatment is performed on a background substrate 1 using inorganic particles 2 disposed on the background substrate 1 as an etching mask, projecting portions 1B corresponding to the shape of the inorganic particles 2 are formed on a surface of the background substrate 1, and coating 3 for epitaxial growth mask is then formed on the background substrate 1. The organic particles 2 residual on the projecting portions 1B are removed thereafter to expose the background substrate 1 in the tops of the projecting portions 1B, a group 3-5 nitride semiconductor is grown from the exposed face of the background substrate in each of the top to form a group 3-5 nitride semiconductor layer 5, and the group 3-5 nitride semiconductor layer 5 is then separated from the background substrate 1, thereby obtaining the independent group 3-5 nitride semiconductor substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
