| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor light emitting element which provides a crack-free clad layer having good surface state so as to realize a semiconductor laser and a light emitting diode having good electrical characteristics and optical characteristics. SOLUTION: In the compound semiconductor light emitting element having at least a lower clad layer, an active layer or a light emitting layer, and an upper clad layer formed on a substrate, the active layer or a light emitting layer is composed of AlInGaN, the upper or lower clad layer consists of repetition of a buffer layer and a clad layer, the buffer layer and the clad layer have different compositions, and the buffer layer is made thinner than the clad layer. COPYRIGHT: (C)2008,JPO&INPIT
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