| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical element which has high yield and can stably prevent reduction of contact area of a semiconductor layer and an electrode layer in the upper front surface of a waveguide ridge. SOLUTION: In the method of manufacturing the LD10, a waveguide ridge 40 is formed in a wafer which laminates a semiconductor layer and an SiO<SB>2</SB>film 78 is formed all over the wafer. While exposing the surface of the SiO<SB>2</SB>film 78 formed in the top part of the waveguide ridge 40, the SiO<SB>2</SB>film 78 of a channel 38 adjoining the waveguide ridge 40 is made higher than the surface of a p-GaN layer 74 of the waveguide ridge 40. Also, a second resist pattern 82 is formed being embedded by the resist film having the surface lower than the surface of the SiO<SB>2</SB>film 78 in the top part of the waveguide ridge 40. The SiO<SB>2</SB>film 78 is removed by using the second resist pattern 82 as a mask so that the surface of the p-GaN layer 74 of the waveguide ridge 40 may be made to expose, where an electrode layer 46 is formed. COPYRIGHT: (C)2008,JPO&INPIT
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